Electrical and Electronics Process Chemical
Positive PR Stripper
IT-1026 was exclusively developed for photoresist stripping of wafer level packaging process of semiconductor, and is a high functional bulk PR stripper suitable for positive PR stripping.
[Features]
• Shows fast stripping speed compared to other solvents
• No residue left after PR stripping
• High functional bulk stripper for positive PR, and perfectly cleans without ash/etch residue
• Excellently removes PR without damage or oxidation on bump metal or substrates
• Conditions of stripping process are flexible to change such as temperature, duration, etc
PR Etching Rate (PR Thickness : 5,30μm, Temp : 50 ℃)
| PR Thickness | “A” Company | “B” Company | IT-1026 |
|---|---|---|---|
| E/R for 5μm PR | 0.4μm /sec. | 0.5μm /sec. | 0.6μm /sec. |
| E/R for 30μm PR | 0.8μm /sec. | 1.1μm /sec. | 1.3μm /sec. |
| PR Thickness | “A” Company | “B” Company | IT-1026 |
[IT-1026 Application]
| Before | after |
|---|---|
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Negative PR Stripper
IT-1030 was exclusively developed for photoresist stripping of wafer level packaging process of semiconductor, and is a solvent type bulk PR stripper suitable for negative PR stripping.
[Features]
• IT-1030 was exclusively developed for PR stripping of wafer bumping.
• High functional bulk stripper for negative PR, and perfectly cleans without ash/etch residue
• Excellently removes PR without damage or oxidation on bump metal or substrates
• Conditions of stripping process are flexible to change such as temperature, duration, etc.
Metal Etching Rate (Å/min.)
| Temp. | SiC | SiN | SiO2 | TEOS | Ti | TiN | W |
|---|---|---|---|---|---|---|---|
| 45℃ | <1 | <1 | <1 | <1 | <1 | <1 | <1 |
| 65℃ | <1 | <1 | <1 | <1 | <1 | <1 | <1 |
[IT-1030 Application]
| Before(gold bumps) | After (50℃, 20min.) |
|---|---|
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